Diffusion effects in short-channel GaAs MESFETs
نویسندگان
چکیده
منابع مشابه
Surface States Effects on GaAs Power MESFETs
The effects of surface states on the gate offset regions of GaAs power MESFETs are analyzed using a two-dimensional device simulator with a Shockley-Read-Hall statistics model for the surface states. Assuming electron trap type surface states (ET) and hole trap type surface states (HT) +, it is found that the trap properties cause a large difference in DC performance and pulse operation of the ...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 1989
ISSN: 0038-1101
DOI: 10.1016/0038-1101(89)90091-9